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, Excited-State Spectroscopy Using Single Spin Manipulation in Diamond, Physical Review Letters 101:117601, 2008 pdf(650k) bibtex |
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, Solid-state quantum memory using the 31P nuclear spin, nature 455(23):1085-1088, 2008 pdf(627k) bibtex |
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, Single atom doping for quantum device development in diamon and silicon, Journal of Vacuum Science and Technology B 26(6):2596-2600, 2008 pdf(467k) bibtex |
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, Spin-Dependent Scattering off Neutral Antimony Donors in 28Si Field-Effect Transistors, Applied Physics Letters 91:242106, 2007 bibtex |
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, Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams, Applied Physics Letters 91:122105, 2007 pdf(276k) bibtex |
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, Micromachined piezoresistive proximal probe with integrated bimorph actuator for aligned single ion implantation, Journal of Vacuum Science and Technology B 24:3148, 2006 pdf(244k) bibtex |
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, Stark Tuning of Donor Electron Spins in Silicon, Physical Review Letters 97:176404, 2006 pdf(298k) bibtex cond-mat/0603324 |
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, Transport of Multiply and Highly Charged Ions through Nanoscale Apertures in Silicon Nitride Membranes, Nuclear Instruments and Methods in Physics Research B 244:323-326, 2006 pdf(222k) bibtex |
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, Transport of mulitply and highly charged ions through nanoscale apertures in silicon nitride membranes, Nuclear Instruments and Methods in Physics Research B 244(2):323-326, 2006 bibtex |
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, Formation fo 15 nm scale Coloumb blockade structures in silicon by electron beam lithography with a bilayer resist process, Journal of Vacuum Science and Technology B 22(6):3182-3185, 2004 pdf(294k) bibtex |
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, Single ion implantation with scanning probe alignment, Journal of Vacuum Science and Technology B 22(6):3115-3118, 2004 pdf(324k) bibtex |
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, Quantum Computer Development with Single Ion Implantation, Journal of Vacuum Science and Technology B 22(6):2992-2994, 2004 pdf(249k) bibtex |
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, Surface charge compensation for a highly charged ion emission microscope, Quantum Information Processing 3:233-245, 2004 pdf(2139k) bibtex |
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, Batch fabricated scanning near field optical microscope/atomic force microscopy microprobe integrated with piezoresistive cantilever beam with highly reproducible focused ion beam micromachined aperture, Ultramicroscopy 101(2-4):225-229, 2004 pdf(587k) bibtex |
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, Processing issues in top-down approaches to quantum computer development in silicon, Journal of Vacuum Science and Technology B :16-21, 2004 pdf(406k) bibtex |
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, Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation, Microelectronic Engineering 73-74:695-700, 2004 pdf(385k) bibtex |
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, Formation of a few nanometer wide holes in membranes with a dual beam focused ion beam system, Nuclear Instruments and Methods in Physics Research B 219-220:200-205, 2003 pdf(664k) ps.gz(985k) bibtex |
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, Probing nano-environments of peptide molecules on solid surfaces by highly charged ion secondary ion mass spectrometry, Journal of Vacuum Science and Technology B 21(6):2720-2723, 2003 pdf(167k) bibtex |
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, Solid state quantum computer development in silicon with single ion implantation, International Journal of Mass Spectroscopy 229:47-53, 2003 bibtex |
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, Single Ion Implantation for Solid State Quantum Computer Development, Journal of Applied Physics 94(11):7017-7024, 2002 pdf(607k) bibtex |
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, Internal dielectronic excitation in highly charged ions colliding with surfaces, Journal of Vacuum Science and Technology B 20:2816-2823, 2002 pdf(102k) bibtex |
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, Extraction of highly charged ions from the electron beam ion trap at LBNL for applications in surface analysis and materials science, Physical Review A 65:042903, 2002 pdf(113k) bibtex |
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, Extraction of highly charged ions (up to 90+) from a high-energy electron-beam ion trap, Review of Scientific Instruments 73:663-666, 2002 pdf(89k) bibtex |
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, Single Ion Implantation for Solid State Quantum Computer Development, Review of Scientific Instruments 73:30-35, 2002 pdf(384k) bibtex |
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, Light-emitting nanostructers formed by intense, ultrafast electronic excitation in silicon (100), in SPIE V4656, 2001 pdf(39k) bibtex cond-mat/0201549 |
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, Transport of Hollow Atoms Through Thin Dielectric Films, Applied Physics Letters 79:2973-2975, 2001 pdf(299k) bibtex |
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, Highly Charged Ion - Secondary Ion Mass Spectrometry (HCI-SIMS): Towards Metrology Solutions for sub 100 nm Technology Nodes, Physica Scripta T92:208-210, 2001 pdf(342k) bibtex |
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, Effects of Radiation on 1,3,5-Triamino-2,4,6-Trinitrobenzene (TATB) Studied by Time-of-Flight Secondary Ion Mass Spectrometry, in SPIE V4468, 2001 bibtex |
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, Highly charged ion based time-of-flight emission microscope, Nuclear Instruments and Methods in Physik Research B 181:199, 2000 pdf(389k) bibtex |
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, Electronic sputterin of solids by slow, highly charged ions: Fundamentals and applications, Review of Scientific Instruments 71(5):2077-2081, 2000 pdf(204k) bibtex |
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, Hydrogenated carbon clusters produced by highly charged ion impact on solid C84, Nuclear Instruments and Methods in Physik Research B 161-163:65-75, 2000 pdf(228k) bibtex |
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, Influence of hydrogen on the stability of psitiely charged silicon dioxide clusters, The European Physical Journal D 12:323-327, 2000 pdf(68k) bibtex |
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, Interaction of slow, very highly charged ions with surfaces, Journal of Chemical Physics 113(6):2419-2422, 1999 pdf(1396k) bibtex |
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, Dependence of cluster ion emission form uranium oxide surfaces on the charge state of the incident slow highly charged ion, Progress in Surface Science 61:23-84, 1999 pdf(350k) bibtex |
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, Surface Analysis by Highly Charged Ion Based Secondary Ion Mass Spectrometry, The European Physical Journal D 6:83-87, 1999 pdf(132k) bibtex |
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, Deposition of Potential Energy in Solids by Slow, Highly Charged Ions, Physica Scripta T80:73-75, 1999 pdf(56k) bibtex |
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, Charge Equilibration Time of Slow, Highly Charged Ions in Solids, Physical Review Letters 83:4273-4276, 1999 pdf(94k) bibtex |
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, Analysis of submicron Cu-Ta-SiO2 structures by highly charged ion secondary ion mass spectrocscopy, Physical Review Letters 82:4795-4798, 1999 pdf(140k) bibtex |
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, Secondary ion coincidence in highly charged ion based secondary ion mass spectroscopy for process characterization, Journal of Vacuum Science and Technology B 17:2331-2335, 1998 pdf(827k) bibtex |
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, Analysis of B-SiO2 films by highly charged ion based time-of-flight secondary ion mass spectrometry, standard secondary ion mass spectrometry and elastic recoil detection, Journal of Vacuum Science and Technology A 17:303-305, 1998 pdf(108k) ps.gz(172k) bibtex |
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, Electronic desorption of alkyl monolayers from silicon by very highly charged ions, Journal of Vacuum Science and Technology A 16:1384-1387, 1998 pdf(136k) bibtex |
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, Cluster ion emission in the interaction of slow highly charged ions with surfaces, Journal of Vacuum Science and Technology B 16:3298-3301, 1998 pdf(430k) bibtex |
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, Synergy of Electronic Excitations and Elastic Collision Spikes in Sputtering of Heavy Metal Oxides, The European Physical Journal D 1:297-302, 1998 pdf(142k) bibtex |
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, Ablation of GaAs by Intense, Ultrafast Electronic Excitation from Highly Charged Ions, Physcial Review Letters 80:4325-438, 1998 pdf(106k) bibtex |
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, Projection x-ray microscope powered by highly charged ions, Physcial Review Letters 81:2590-2593, 1998 pdf(453k) bibtex |
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, Electron capture from H-2 to highly charged Th and Xe ions trapped at center-of-mass energies near 6 eV, Review of Scientific Instruments 69:204-209, 1998 pdf(328k) bibtex |
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, Electronic Sputtering of Thin Conductors by Neutralization of slow Highly Charged Ions, Nuclear Instruments and Methods in Physics Research B 125:153-158, 1997 pdf(130k) bibtex |
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, Recent results from the EBIT and super EBIT at Lawrence Livermore National Laboratory, Physical Review Letters 79:2030-2033, 1997 bibtex |
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, Non-equilibrium energy loss for very highly charged ions in insulators, Physica Scripta T73:354-359, 1997 bibtex |
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, Electronic sputtering and desorption effects in TOF-SIMS studies using slow highly charged ions like Au69+, Physica Scripta T73:324-325, 1997 bibtex |
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, Production and Trapping of Hydrogenlike and Bare Uranium Ions in an Electron-Beam Ion-Trap, Nuclear Instruments and Methods in Physics Research A 357:110-114, 1994 pdf(811k) bibtex |
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